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      Indium tin oxide ohmic contact to highly doped n-GaN

      Author(s): , , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Solid-State Electronics
      Publisher: Elsevier BV

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          Journal
          Title: Solid-State Electronics
          Abbreviated Title: Solid-State Electronics
          Publisher: Elsevier BV
          ISSN (Print): 00381101
          Publication date Created: November 1999
          Publication date (Print): November 1999
          Volume: 43
          Issue: 11
          Pages: 2081-2084
          Article
          DOI: 10.1016/S0038-1101(99)00177-X
          SO-VID: 360194e7-10b1-4b64-91e6-c7dc7bda47ca
          Copyright © © 1999
          License:

          http://www.elsevier.com/tdm/userlicense/1.0/

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