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      Photoluminescence characteristics of soft PZT 53/47 ceramic doped at A and/or B sites

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          Abstract

          This study presents the photoluminescence characteristics of the PZT 53/47 system doped at A and/or B sites, with Nb (PZTN), La (PLZT), and Nb–La (PLZTN) in the concentration range from 0.2 to 1.0 molar fraction. The intensity of the emission bands of the system PZTN is two orders higher than the intensity of the emission bands of the systems PLZT and PLZTN, and these emission bands are located at 1.73 eV (718 nm), 2.56 eV (485 nm), and 2.93 eV (424 nm). The origin of the luminescence in these systems is associated with lead and oxygen vacancies produced during the sintering process. The results from X-ray diffraction (XRD) show a mixture of rhombohedral and tetragonal phases. The system PZTN shows a higher tetragonal phase concentration, while PLZT and PLZTN systems show a higher rhombohedral phase concentration. The cell volume shows an increase with dopant concentration only in the case of the PLZTN system. The band gap energy shows a small variation in the PZTN and PLZTN cases around 3.0 eV, a close value to the band gap energy of the pure PZT 53/47 sample. The system PLZT shows an increasing behavior until 4.41 eV for the higher dopant concentration.

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          Author and article information

          Journal
          Journal of Advanced Ceramics
          Journal of Advanced Ceramics
          Tsinghua University Press (Tsinghua University, Beijing 100084, China )
          2226-4108
          05 June 2018
          : 07
          : 02
          : 109-116 (pp. )
          Affiliations
          aUniversidad Nacional Evangélica, Calle Libertador No. 18, San Carlos, Santo Domingo, Distrito Nacional, CP 10203, República Dominicana
          bDepartamento de Física Aplicada, Instituto de Cibernética, Matemática y Física, CITMA, 15 # 551, Vedado, La Habana, CP 10400, Cuba
          cCatedrático CONACYT-Facultad de Ciencias Físico Matemáticas, Benemérita Universidad Autónoma de Puebla, AP 1152, Puebla, Pue., 72000, México
          dCINVESTAV-Unidad Querétaro del IPN, Libramiento Norponiente 2000, Fracc. Real de Juriquilla, CP 76230, Santiago de Querétaro, Querétaro, México
          Author notes
          * Corresponding author. E-mail: jmyanez@ 123456cinvestav.mx
          Article
          2226-4108-07-02-109
          10.1007/s40145-018-0262-8

          This work is licensed under a Creative Commons Attribution 4.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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