Growth of GaAs quantum wire arrays by organometallic chemical vapor deposition on submicron gratings

Bhat, R.; Colás, E.; Lin, P. S. D.; Simhony, S.; Kapon, E; Hwang, D. M.

doi:10.1063/1.103384

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Growth of GaAs quantum wire arrays by organometallic chemical vapor deposition on submicron gratings

Author(s): E. Colas , S. Simhony , E. Kapon , R. Bhat , D. M. Hwang , P. S. D. Lin

Publication date Created: August 27 1990

Publication date (Print): August 27 1990

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Stimulated emission in semiconductor quantum wire heterostructures

E Kapon, D. Hwang, R. Bhat (1989)

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Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy

P. Petroff, W. Wiegmann, A C Gossard (1984)

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Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates

J M Gaines (1988)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: August 27 1990

Publication date (Print): August 27 1990

Volume: 57

Issue: 9

Pages: 914-916

Article

DOI: 10.1063/1.103384

SO-VID: 3e5e19c0-bfe4-49bc-9917-0210d734b334

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Growth of GaAs quantum wire arrays by organometallic chemical vapor deposition on submicron gratings

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Animal models of intrauterine growth restriction (IUGR)

Most cited references 13

Stimulated emission in semiconductor quantum wire heterostructures

Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy

Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates

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