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      Empirical low-field mobility model for III–V compounds applicable in device simulation codes

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      Journal of Applied Physics
      AIP Publishing

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          Material parameters of In1−xGaxAsyP1−yand related binaries

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            Carrier mobilities in silicon empirically related to doping and field

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              Electron and hole mobilities in silicon as a function of concentration and temperature

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                March 15 2000
                March 15 2000
                : 87
                : 6
                : 2890-2900
                Article
                10.1063/1.372274
                46f35281-f9a2-40a1-88ce-d8be2aed53ea
                © 2000
                History

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