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      A survey of circuit innovations in ferroelectric random-access memories

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          An experimental 512-bit nonvolatile memory with ferroelectric storage cell

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            Nonvolatile multilevel memories for digital applications

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              High-density chain ferroelectric random access memory (chain FRAM)

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                Author and article information

                Journal
                Proceedings of the IEEE
                Proc. IEEE
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9219
                1558-2256
                May 2000
                May 2000
                : 88
                : 5
                : 667-689
                Article
                10.1109/5.849164
                490c2ab3-264e-4e12-b71f-d03f514cd806
                © 2000
                History

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