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Inclined-epitaxy of β-SiC on Si(n11) substrates (n = 3, 4, 5, 6) by chemical vapor deposition
Author(s):
M. Shigeta
,
Y. Fujii
,
A. Ogura
,
K. Furukawa
,
A. Suzuki
,
S. Nakajima
Publication date
Created:
1988
Publication date
(Print):
1988
Journal:
Journal of Crystal Growth
Publisher:
Elsevier BV
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UCL: UN SDG 06 Clean Water and Sanitation
Author and article information
Journal
Title:
Journal of Crystal Growth
Abbreviated Title:
Journal of Crystal Growth
Publisher:
Elsevier BV
ISSN (Print):
00220248
Publication date Created:
1988
Publication date (Print):
1988
Volume
: 93
Issue
: 1-4
Pages
: 766-770
Article
DOI:
10.1016/0022-0248(88)90617-3
SO-VID:
49b9ad85-efa9-4eec-9451-f5c347caf32f
Copyright ©
© 1988
License:
https://www.elsevier.com/tdm/userlicense/1.0/
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