Origin and Tunability of Unusually Large Surface Capacitance in Doped Cerium Oxide Studied by Ambient-Pressure X-Ray Photoelectron Spectroscopy.

There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

Abstract

The volumetric redox (chemical) capacitance of the surface of CeO2-δ films is quantified in situ to be 100-fold larger than the bulk values under catalytically relevant conditions. Sm addition slightly lowers the surface oxygen nonstoichiometry, but effects a 10-fold enhancement in surface chemical capacitance by mitigating defect interactions, highlighting the importance of differential nonstoichiometry for catalysis.

Related collections

Author and article information

Journal

Journal ID (iso-abbrev): Adv. Mater. Weinheim

Title: Advanced materials (Deerfield Beach, Fla.)

Publisher: Wiley

ISSN (Electronic): 1521-4095

ISSN (Print): 0935-9648

Publication date (Electronic): Jun 2016

Volume: 28

Issue: 23

Affiliations

[1 ] Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, CA, 94305, USA.

[2 ] Sandia National Laboratories, Livermore, CA, 94550, USA.

[3 ] Stanford Institute of Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.

Article

DOI: 10.1002/adma.201506333

PubMed ID: 27031580

SO-VID: 4be515df-f307-4b7d-89f1-0c7f675b1605

History

Keywords: redox,catalysis,ceria,interfacial,nonstoichiometry

Data availability:

Keywords: redox, catalysis, ceria, interfacial, nonstoichiometry

Comments

Comment on this article

scite_

Cited by 14

See all cited by