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      Theoretical design of two-dimensional AMInP 2X 3Y 3 (AM = Li, Na, K; X/Y = S, Se, Te) monolayers for highly efficient excitonic solar cells

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          Abstract

          Two-dimensional alkali metal indium phosphorus trichalcogenides AMInP 2X 3Y 3 monolayers are regarded as promising candidates for use in photovoltaic solar cells.

          Abstract

          Two-dimensional materials are regarded as promising candidates for use in photovoltaic solar cells. On the basis of first-principles calculations, we show that the 2D alkali metal indium phosphorus trichalcogenides AMInP 2X 3Y 3 (AM = Li, Na, or K; X/Y = S, Se, or Te) monolayers possess excellent stability and great potential for solar energy conversion applications. The cohesive energies, phonon spectra, and elastic constants of these materials demonstrate their high thermodynamic, kinetic, and mechanical stabilities. The 2D NaInP 2Te 6 (NT), KInP 2Te 6 (KT), and AMInP 2Te 3Se 3 (LTS,NTS, and KTS) monolayers are promising donor materials for excitonic solar cells with high photovoltaic performance. More importantly, the appropriate donor bandgaps and small conduction band offsets of these type II heterostructures result in power conversion efficiencies (PCE) of up to 22.12% (NT/InSe), 18.23% (KT/MoGe 2N 4), 21.93% (NTS/MoGe 2N 4) and 18.00% (KTS/T-HfSe 2), making them promising candidates for solar energy conversion applications. Our findings reveal the great potential of 2D alkali metal indium phosphorus trichalcogenides for the design of high-performance excitonic solar cells.

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          Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set

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            Electric Field Effect in Atomically Thin Carbon Films

            We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10 13 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.
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              Special points for Brillouin-zone integrations

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                Author and article information

                Contributors
                Journal
                MAADC9
                Materials Advances
                Mater. Adv.
                Royal Society of Chemistry (RSC)
                2633-5409
                January 23 2023
                2023
                : 4
                : 2
                : 570-577
                Affiliations
                [1 ]International Center for Computational Method & Software and State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China
                [2 ]Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Jilin University, Changchun, 130012, China
                [3 ]Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, SK, S7N 5E2, Canada
                [4 ]International Center of Future Science, Jilin University, 130012, Changchun, China
                Article
                10.1039/D2MA00937D
                4dafa853-9b88-4305-a652-f2429f30a198
                © 2023

                http://creativecommons.org/licenses/by-nc/3.0/

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