For Publishers
DiscoveryMetadataPeer reviewHostingPublishing
For Researchers
JoinPublishReviewCollect
Register
Blog
About
Search
Advanced search
My ScienceOpen
Search
For Publishers
For Researchers
Blog
About
17
views
3
references
 Top references
cited by
0
    
0 reviews
 Review
0
comments
 Comment
0
recommends
+1 Recommend
0 collections
    0
    shares
      429
      similar
       All similar
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      p-type doping in CVD grown MoS2 using Nb

      Preprint

      Read this article at

      ScienceOpenArXiv
      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Abstract

          We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 4 x 1020 cm-3 Hall mobility of 8.5 cm2V-1s-1 was determined, which matches well with the theoretically expected values. XRD and Raman characterization indicate that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. This demonstration of p-doping in large area epitaxial MoS2 could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.

          Related collections

          Most cited references3

          • Record: found
          • Abstract: found
          • Article: not found

          Integrated circuits and logic operations based on single-layer MoS2.

          Branimir Radisavljevic, Michael Brian Whitwick, Andras Kis (2011)
          Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the near future. Two-dimensional materials such as single-layer MoS(2) represent the ultimate limit of miniaturization in the vertical dimension, are interesting as building blocks of low-power nanoelectronic devices, and are suitable for integration due to their planar geometry. Because they are less than 1 nm thin, 2D materials in transistors could also lead to reduced short channel effects and result in fabrication of smaller and more power-efficient transistors. Here, we report on the first integrated circuit based on a two-dimensional semiconductor MoS(2). Our integrated circuits are capable of operating as inverters, converting logical "1" into logical "0", with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits. We also show that electrical circuits composed of single-layer MoS(2) transistors are capable of performing the NOR logic operation, the basis from which all logical operations and full digital functionality can be deduced.
          Article 0 comments Cited 357 times – based on 0 reviews     Review now
            Bookmark
            • Record: found
            • Abstract: found
            • Article: not found

            Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.

            Gwan-Hyoung Lee, Young-Jun Yu, Zhuo-Xu Cui … (2013)
            Atomically thin forms of layered materials, such as conducting graphene, insulating hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have generated great interests recently due to the possibility of combining diverse atomic layers by mechanical "stacking" to create novel materials and devices. In this work, we demonstrate field-effect transistors (FETs) with MoS2 channels, hBN dielectric, and graphene gate electrodes. These devices show field-effect mobilities of up to 45 cm(2)/Vs and operating gate voltage below 10 V, with greatly reduced hysteresis. Taking advantage of the mechanical strength and flexibility of these materials, we demonstrate integration onto a polymer substrate to create flexible and transparent FETs that show unchanged performance up to 1.5% strain. These heterostructure devices consisting of ultrathin two-dimensional (2D) materials open up a new route toward high-performance flexible and transparent electronics.
            Article 0 comments Cited 299 times – based on 0 reviews     Review now
              Bookmark
              • Record: found
              • Abstract: not found
              • Article: not found

              Band Structure of the Layered Transition-Metal Dichalcogenides: An Experimental Study by Electron Paramagnetic Resonance on Nb-Doped Mo\({\mathrm{S}}_{2}\)

              R. S. Title, M. Shafer (1972)
              Article 0 comments Cited 28 times – based on 0 reviews     Review now
                Bookmark
                All references

                Author and article information

                Journal
                Publication date Created: 24 October 2013
                Article
                ArXiV ID: 1310.6494
                SO-VID: 549ebeff-2906-4d7f-9c35-66991411a065
                License:

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                History
                Custom metadata
                Categories cond-mat.mtrl-sci

                ScienceOpen disciplines: Condensed matter
                Data availability:
                ScienceOpen disciplines: Condensed matter

                Comments

                Comment on this article