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      Formation mechanism of insensitive tellurium hexanitride with armchair-like cyclo-N 6 anions

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          Abstract

          The lower decomposition barriers of cyclo-N 6 anions hinder their application as high-energy-density materials. Here, first-principles calculations and molecular dynamics simulations reveal that enhancing the covalent component of the interaction between cyclo-N 6 anions and cations can effectively improve the stability of cyclo-N 6 anions. Taking tellurium hexanitride as a representative, the exotic armchair-like N 6 anions of tellurium hexanitride exhibit resistance towards electronic attack and gain extra stability through the formation of covalent bonds with the surrounding elemental tellurium under high pressures. These covalent bonds effectively improve the chemical barrier and insensitivity of tellurium hexanitride during blasting, which prevents the decomposition of solid cyclo-N 6 salts into molecular nitrogen. Furthermore, the high-pressure induced covalent bonds between cyclo-N 6 anions and tellurium enable the high bulk modulus, remarkable detonation performance, and high-temperature thermodynamic stability of tellurium hexanitride.

          Abstract

          The lower decomposition barriers of cyclo-N 6 anions hinder their application as high-energy-density materials. Here, first-principles calculations reveal that enhancing the covalent component of the interaction between cyclo-N 6 anions and cations can effectively improve stability at high pressure.

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          Most cited references49

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                Author and article information

                Contributors
                dali@jlu.edu.cn
                cuitian@jlu.edu.cn
                Journal
                Commun Chem
                Commun Chem
                Communications Chemistry
                Nature Publishing Group UK (London )
                2399-3669
                2 April 2020
                2 April 2020
                2020
                : 3
                : 42
                Affiliations
                [1 ]GRID grid.64924.3d, ISNI 0000 0004 1760 5735, State Key Laboratory of Superhard Materials, , Jilin University, ; Changchun, 130012 People’s Republic of China
                [2 ]GRID grid.203507.3, ISNI 0000 0000 8950 5267, School of Physical Science and Technology, , Ningbo University, ; Ningbo, 315211 People’s Republic of China
                Author information
                http://orcid.org/0000-0002-0041-9181
                http://orcid.org/0000-0002-6878-1830
                Article
                286
                10.1038/s42004-020-0286-1
                9814709
                5c1d6bb0-f465-488b-8e1e-5e00d8125aa0
                © The Author(s) 2020

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 17 December 2019
                : 9 March 2020
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                © The Author(s) 2020

                electronic properties and materials,chemical bonding,computational chemistry

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