9
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      Low Gilbert Damping Constant in Perpendicularly Magnetized W/CoFeB/MgO Films with High Thermal Stability

      research-article

      Read this article at

      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Abstract

          Perpendicular magnetic materials with low damping constant and high thermal stability have great potential for realizing high-density, non-volatile, and low-power consumption spintronic devices, which can sustain operation reliability for high processing temperatures. In this work, we study the Gilbert damping constant ( α) of perpendicularly magnetized W/CoFeB/MgO films with a high perpendicular magnetic anisotropy (PMA) and superb thermal stability. The α of these PMA films annealed at different temperatures ( T ann) is determined via an all-optical Time-Resolved Magneto-Optical Kerr Effect method. We find that α of these W/CoFeB/MgO PMA films decreases with increasing T ann, reaches a minimum of α = 0.015 at T ann = 350 °C, and then increases to 0.020 after post-annealing at 400 °C. The minimum α observed at 350 °C is rationalized by two competing effects as T ann becomes higher: the enhanced crystallization of CoFeB and dead-layer growth occurring at the two interfaces of the CoFeB layer. We further demonstrate that α of the 400 °C-annealed W/CoFeB/MgO film is comparable to that of a reference Ta/CoFeB/MgO PMA film annealed at 300 °C, justifying the enhanced thermal stability of the W-seeded CoFeB films.

          Related collections

          Most cited references44

          • Record: found
          • Abstract: found
          • Article: not found

          A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.

          Magnetic tunnel junctions (MTJs) with ferromagnetic electrodes possessing a perpendicular magnetic easy axis are of great interest as they have a potential for realizing next-generation high-density non-volatile memory and logic chips with high thermal stability and low critical current for current-induced magnetization switching. To attain perpendicular anisotropy, a number of material systems have been explored as electrodes, which include rare-earth/transition-metal alloys, L1(0)-ordered (Co, Fe)-Pt alloys and Co/(Pd, Pt) multilayers. However, none of them so far satisfy high thermal stability at reduced dimension, low-current current-induced magnetization switching and high tunnel magnetoresistance ratio all at the same time. Here, we use interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane anisotropy. This approach requires no material other than those used in conventional in-plane-anisotropy MTJs. The perpendicular MTJs consisting of Ta/CoFeB/MgO/CoFeB/Ta show a high tunnel magnetoresistance ratio, over 120%, high thermal stability at dimension as low as 40 nm diameter and a low switching current of 49 microA.
            Bookmark
            • Record: found
            • Abstract: found
            • Article: found
            Is Open Access

            Spin torque switching with the giant spin Hall effect of tantalum

            We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. We implement a three-terminal device that utilizes current passing through a low impedance Ta-ferromagnet bilayer to effect switching of a nanomagnet, with a higher-impedance magnetic tunnel junction for read-out. The efficiency and reliability of this device, together with its simplicity of fabrication, suggest that this three-terminal SHE-ST design can eliminate the main obstacles currently impeding the development of magnetic memory and non-volatile spin logic technologies.
              Bookmark
              • Record: found
              • Abstract: not found
              • Article: not found

              On the Theory of Ferromagnetic Resonance Absorption

                Bookmark

                Author and article information

                Contributors
                jpwang@umn.edu
                wang4940@umn.edu
                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group UK (London )
                2045-2322
                6 September 2018
                6 September 2018
                2018
                : 8
                : 13395
                Affiliations
                [1 ]ISNI 0000000419368657, GRID grid.17635.36, Department of Mechanical Engineering, , University of Minnesota, ; Minneapolis, MN 55455 USA
                [2 ]ISNI 0000000419368657, GRID grid.17635.36, Department of Electrical and Computer Engineering, , University of Minnesota, ; Minneapolis, MN 55455 USA
                Author information
                http://orcid.org/0000-0002-3614-4677
                http://orcid.org/0000-0001-6296-7178
                Article
                31642
                10.1038/s41598-018-31642-9
                6127240
                30190535
                62ea002c-ec97-4fad-9eca-9ab947cb14d7
                © The Author(s) 2018

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 15 May 2018
                : 17 August 2018
                Funding
                Funded by: FundRef https://doi.org/10.13039/100007245, SRC | Microelectronics Advanced Research Corporation (MARCO);
                Award ID: 2013-MA-2381
                Award ID: 2013-MA-2381
                Award ID: 2013-MA-2381
                Award ID: 2013-MA-2381
                Award ID: 2013-MA-2381
                Award ID: 2013-MA-2381
                Award Recipient :
                Funded by: FundRef https://doi.org/10.13039/100000185, DOD | Defense Advanced Research Projects Agency (DARPA);
                Award ID: 2013-MA-2381
                Award ID: 2013-MA-2381
                Award ID: 2013-MA-2381
                Award ID: 2013-MA-2381
                Award ID: 2013-MA-2381
                Award Recipient :
                Categories
                Article
                Custom metadata
                © The Author(s) 2018

                Uncategorized
                Uncategorized

                Comments

                Comment on this article