ScienceOpen:
research and publishing network
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
My ScienceOpen
Sign in
Register
Dashboard
Blog
About
Search
Advanced search
My ScienceOpen
Sign in
Register
Dashboard
Search
Search
Advanced search
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
Blog
About
8
views
0
references
Top references
cited by
3
0 reviews
Review
0
comments
Comment
0
recommends
+1
Recommend
0
collections
Add to
0
shares
Share
Twitter
Sina Weibo
Facebook
Email
2,764
similar
All similar
Record
: found
Abstract
: not found
Article
: not found
High-resolution reactive ion etching and damage effects in the Si/GexSi1−x system
Author(s):
R Cheung
,
R. CHEUNG
,
R Cheung
Publication date:
1993
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Read this article at
ScienceOpen
Publisher
Further versions
open (via free pdf)
Powered by
Bookmark
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
HR-EBSD (High Resolution - Electron Back Scatter Diffraction)
Author and article information
Journal
DOI::
10.1116/1.586461
Data availability:
Comments
Comment on this article
Sign in to comment
scite_
Similar content
2,764
An investigation on the thermal stability of the GexSi1-x⧸Si superlattice grown by MBE
Authors:
Guoliang Zhou
,
Xiang-jiu Zhang
,
Chi Sheng
…
Kinetic critical thickness for surface wave instability vs. misfit dislocation formation in GexSi1−x/Si (100) heterostructures
Authors:
D.D. Perovic
,
D.W. McComb
,
B. Bahierathan
…
Raman scattering analysis of relaxed GexSi1−xalloy layers
Authors:
J. Chu
,
J. C. Tsang
,
F. Dacol
…
See all similar
Cited by
3
Weak localization in back-gated Si/\({\mathrm{Si}}_{0.7}\)\({\mathrm{Ge}}_{0.3}\)quantum-well wires fabricated by reactive ion etching
Authors:
K Ismail
,
K. Lee
,
J. Chu
…
Helium Ion Lithography
Authors:
Emile van der Drift
,
Diederik Maas
Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etching
Authors:
Jinghao Chen
,
Kian Ming Tan
,
Nan Wu
…
See all cited by