Electronic Raman Scattering in Twistronic Few-Layer Graphene

Abstract

We study electronic contribution to the Raman scattering of two- to four-layer graphene with the top layer twisted by a small angle, \(\theta<2^{\circ}\), relatively to the 2D crystal underneath. We find that the Raman spectrum features two peaks produced by van Hove singularities in moir\'{e} minibands characteristic for twistronic graphene, one related to direct hybridization of Dirac states, and the other resulting from band folding caused by moir\'{e} superlattice. The positions of both peaks strongly depend on the twist angle, so that their detection can be used for non-invasive measurements of twist angle, even in the hBN-encapsulated structures.