17
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      A robust and tuneable mid-infrared optical switch enabled by bulk Dirac fermions

      research-article

      Read this article at

      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Abstract

          Pulsed lasers operating in the mid-infrared (3–20 μm) are important for a wide range of applications in sensing, spectroscopy, imaging and communications. Despite recent advances with mid-infrared gain platforms, the lack of a capable pulse generation mechanism remains a significant technological challenge. Here we show that bulk Dirac fermions in molecular beam epitaxy grown crystalline Cd 3As 2, a three-dimensional topological Dirac semimetal, constitutes an exceptional ultrafast optical switching mechanism for the mid-infrared. Significantly, we show robust and effective tuning of the scattering channels of Dirac fermions via an element doping approach, where photocarrier relaxation times are found flexibly controlled over an order of magnitude (from 8 ps to 800 fs at 4.5 μm). Our findings reveal the strong impact of Cr doping on ultrafast optical properties in Cd 3As 2 and open up the long sought parameter space crucial for the development of compact and high-performance mid-infrared ultrafast sources.

          Abstract

          Mid-infrared pulsed sources are technologically important for sensing and spectroscopy but their implementation is challenging due to the lack of a tuneable optical switch. Here, the authors address this limitation by engineering the band structure of an emerging Dirac semimetal, Cd 3As 2.

          Related collections

          Most cited references22

          • Record: found
          • Abstract: found
          • Article: not found

          Recent developments in compact ultrafast lasers.

          Ultrafast lasers, which generate optical pulses in the picosecond and femtosecond range, have progressed over the past decade from complicated and specialized laboratory systems to compact, reliable instruments. Semiconductor lasers for optical pumping and fast optical saturable absorbers, based on either semiconductor devices or the optical nonlinear Kerr effect, have dramatically improved these lasers and opened up new frontiers for applications with extremely short temporal resolution (much smaller than 10 fs), extremely high peak optical intensities (greater than 10 TW/cm2) and extremely fast pulse repetition rates (greater than 100 GHz).
            Bookmark
            • Record: found
            • Abstract: found
            • Article: found
            Is Open Access

            Graphene Mode-Locked Ultrafast Laser

            Graphene is at the center of a significant research effort. Near-ballistic transport at room temperature and high mobility make it a potential material for nanoelectronics. Its electronic and mechanical properties are also ideal for micro and nanomechanical systems, thin-film transistors and transparent and conductive composites and electrodes. Here we exploit the optoelectronic properties of graphene to realize an ultrafast laser. A graphene-polymer composite is fabricated using wet-chemistry techniques. Pauli blocking following intense illumination results in saturable absorption, independent of wavelength. This is used to passively mode-lock an Erbium-doped fibre laser working at 1559nm, with a 5.24nm spectral bandwidth and ~460fs pulse duration, paving the way to graphene-based photonics.
              Bookmark
              • Record: found
              • Abstract: found
              • Article: not found

              Broadband nonlinear optical response in multi-layer black phosphorus: an emerging infrared and mid-infrared optical material.

              Black phosphorous (BP), the most thermodynamically stable allotrope of phosphorus, is a high-mobility layered semiconductor with direct band-gap determined by the number of layers from 0.3 eV (bulk) to 2.0 eV (single layer). Therefore, BP is considered as a natural candidate for broadband optical applications, particularly in the infrared (IR) and mid-IR part of the spectrum. The strong light-matter interaction, narrow direct band-gap, and wide range of tunable optical response make BP as a promising nonlinear optical material, particularly with great potentials for infrared and mid-infrared opto-electronics. Herein, we experimentally verified its broadband and enhanced saturable absorption of multi-layer BP (with a thickness of ~10 nm) by wide-band Z-scan measurement technique, and anticipated that multi-layer BPs could be developed as another new type of two-dimensional saturable absorber with operation bandwidth ranging from the visible (400 nm) towards mid-IR (at least 1930 nm). Our results might suggest that ultra-thin multi-layer BP films could be potentially developed as broadband ultra-fast photonics devices, such as passive Q-switcher, mode-locker, optical switcher etc.
                Bookmark

                Author and article information

                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group
                2041-1723
                20 January 2017
                2017
                : 8
                : 14111
                Affiliations
                [1 ]School of Electronic Science and Engineering, Nanjing University , Nanjing 210093, China
                [2 ]Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
                [3 ]State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China
                [4 ]School of Optoelectronic Information, University of Electronic Science and Technology of China , Chengdu 610054, China
                [5 ]National Laboratory of Solid State Microstructures and School of Physics, Nanjing University , Nanjing 210093, China
                [6 ]Department of Physics, South University of Science and Technology of China , Shenzhen 518055, China
                [7 ]School of Physics and Institute for Superconducting and Electronic Materials, University of Wollongong , New South Wales 2522, Australia
                Author notes
                [*]

                These authors contributed equally to this work

                Author information
                http://orcid.org/0000-0002-2817-0488
                Article
                ncomms14111
                10.1038/ncomms14111
                5263875
                28106037
                717a7bde-5d11-48c2-afae-96b9ea20f755
                Copyright © 2017, The Author(s)

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                : 03 June 2016
                : 29 November 2016
                Categories
                Article

                Uncategorized
                Uncategorized

                Comments

                Comment on this article