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      Disappearance of impurity levels in silicon and germanium due to screening

      Author(s): , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Multi-level adaptive solutions to boundary-value problems

          Achi Brandt (1977)
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            Theory of Donor States in Silicon

            W. Kohn, J. M. Luttinger (1955)
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              Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus

              G. L. Pearson, J. Bardeen (1949)
              Article 0 comments Cited 259 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: June 1981
                Publication date (Print): June 1981
                Volume: 52
                Issue: 6
                Pages: 4075-4080
                Article
                DOI: 10.1063/1.329256
                SO-VID: 747662fd-30d9-4d58-b519-58af0df57339
                Copyright © © 1981
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