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      Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

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          Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects

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            Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition

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              75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

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                Author and article information

                Journal
                IEEE Transactions on Electron Devices
                IEEE Trans. Electron Devices
                Institute of Electrical and Electronics Engineers (IEEE)
                00189383
                March 1995
                : 42
                : 3
                : 455-468
                Article
                10.1109/16.368039
                74e2c6dd-ca75-47b2-87f7-bf8e678bc8ca
                © 1995
                History

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