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      Enhanced Surface Passivation of Subnanometer Silicon Dioxide Films by Superacidic Treatments

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          Most cited references44

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          Improved quantitative description of Auger recombination in crystalline silicon

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            Growth of native oxide on a silicon surface

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              Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2interface

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                Author and article information

                Contributors
                (View ORCID Profile)
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                Journal
                ACS Applied Energy Materials
                ACS Appl. Energy Mater.
                American Chemical Society (ACS)
                2574-0962
                2574-0962
                February 28 2022
                January 24 2022
                February 28 2022
                : 5
                : 2
                : 1542-1550
                Affiliations
                [1 ]School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom
                [2 ]Department of Chemistry, University of Warwick, Coventry CV4 7AL, United Kingdom
                [3 ]Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
                Article
                10.1021/acsaem.1c02935
                7bfe99f5-c4ba-40b2-acb1-08cf7a46adea
                © 2022

                https://creativecommons.org/licenses/by/4.0/

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