A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells

There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

Abstract

Based on first-principles calculations, we demonstrated that a GeSe/SnSe heterostructure has a type-II band alignment and a direct band gap. The predicted photoelectric conversion efficiency (PCE) for the GeSe/SnSe heterostructure reaches 21.47%.

Abstract

Based on the first-principles calculations, we demonstrated that a GeSe/SnSe heterostructure has type-II band alignment and a direct band gap, which can effectively prevent the recombination of photogenerated electron–hole pairs. Moreover, the GeSe/SnSe heterostructure also exhibits strong optical absorption intensity, which can reach the order of 10 ⁵ cm ⁻¹. Our predicted photoelectric conversion efficiency (PCE) for the GeSe/SnSe heterostructure reaches 21.47%. We also found that the hole carrier mobility of the GeSe/SnSe heterostructure along the x direction has been significantly improved to 6.42 × 10 ⁴ cm ² V ⁻¹ s ⁻¹, which is higher than that of black phosphorus (1 × 10 ⁴ cm ² V ⁻¹ s ⁻¹). By applying a vertical external electric field, we found that the band gap and band offset of the GeSe/SnSe heterojunction can be effectively tuned. The revealed type-II band alignment, strong optical absorption, superior PCE and superior hole carrier mobility of the GeSe/SnSe heterostructure imply that this new proposed material has broad application prospects in solar cells.

Related collections

Most cited references 36

Record: found
Abstract: not found
Article: not found

Generalized Gradient Approximation Made Simple

John P Perdew, Kieron Burke, Matthias Ernzerhof (1997)

0 comments Cited 28316 times – based on 0 reviews      Review now

Bookmark

Record: found
Abstract: found
Article: not found

A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu.

Stefan Grimme, Jens Antony, Stephan Ehrlich … (2010)

The method of dispersion correction as an add-on to standard Kohn-Sham density functional theory (DFT-D) has been refined regarding higher accuracy, broader range of applicability, and less empiricism. The main new ingredients are atom-pairwise specific dispersion coefficients and cutoff radii that are both computed from first principles. The coefficients for new eighth-order dispersion terms are computed using established recursion relations. System (geometry) dependent information is used for the first time in a DFT-D type approach by employing the new concept of fractional coordination numbers (CN). They are used to interpolate between dispersion coefficients of atoms in different chemical environments. The method only requires adjustment of two global parameters for each density functional, is asymptotically exact for a gas of weakly interacting neutral atoms, and easily allows the computation of atomic forces. Three-body nonadditivity terms are considered. The method has been assessed on standard benchmark sets for inter- and intramolecular noncovalent interactions with a particular emphasis on a consistent description of light and heavy element systems. The mean absolute deviations for the S22 benchmark set of noncovalent interactions for 11 standard density functionals decrease by 15%-40% compared to the previous (already accurate) DFT-D version. Spectacular improvements are found for a tripeptide-folding model and all tested metallic systems. The rectification of the long-range behavior and the use of more accurate C(6) coefficients also lead to a much better description of large (infinite) systems as shown for graphene sheets and the adsorption of benzene on an Ag(111) surface. For graphene it is found that the inclusion of three-body terms substantially (by about 10%) weakens the interlayer binding. We propose the revised DFT-D method as a general tool for the computation of the dispersion energy in molecules and solids of any kind with DFT and related (low-cost) electronic structure methods for large systems.