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      ZnO/CuCrO 2 Core–Shell Nanowire Heterostructures for Self‐Powered UV Photodetectors with Fast Response

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          Abstract

          An original self‐powered UV photodetector integrating ZnO/CuCrO 2 core–shell nanowire heterostructures is fabricated using low‐cost and scalable chemical deposition techniques operating at moderate temperatures. A 35 nm thick delafossite phase CuCrO 2 shell is formed with high uniformity by aerosol‐assisted chemical vapor deposition over an array of vertically aligned ZnO nanowires grown by chemical bath deposition. The CuCrO 2 shell consists of columnar grains at the top of ZnO nanowires as well as nanograins with some preferential orientations on their vertical sidewalls. The ZnO/CuCrO 2 core–shell nanowire heterostructures exhibit significant diode behavior, with a rectification ratio approaching 1.2 × 10 4 at 1 V and ‐1 V, as well as a high optical absorptance above 85% in the UV part of the electromagnetic spectrum. A high UV responsivity at zero bias under low‐power illumination of up to 3.43 mA W −1 under a 365 nm UV lamp, and up to 5.87 mA W −1 at 395 nm from spectrally resolved measurements, alongside a high selectivity with a UV‐to‐visible (395–550 nm) rejection ratio of 106 is measured. The short rise and decay times of 32 and 35 µs, respectively, both measured at zero bias, further establish these devices as promising candidates for cost‐efficient, all‐oxide self‐powered UV photodetectors.

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          Most cited references79

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          Fundamentals of zinc oxide as a semiconductor

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            ZnO nanowire UV photodetectors with high internal gain.

            ZnO nanowire (NW) visible-blind UV photodetectors with internal photoconductive gain as high as G approximately 108 have been fabricated and characterized. The photoconduction mechanism in these devices has been elucidated by means of time-resolved measurements spanning a wide temporal domain, from 10-9 to 102 s, revealing the coexistence of fast (tau approximately 20 ns) and slow (tau approximately 10 s) components of the carrier relaxation dynamics. The extremely high photoconductive gain is attributed to the presence of oxygen-related hole-trap states at the NW surface, which prevents charge-carrier recombination and prolongs the photocarrier lifetime, as evidenced by the sensitivity of the photocurrrent to ambient conditions. Surprisingly, this mechanism appears to be effective even at the shortest time scale investigated of t < 1 ns. Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products (GB) higher than approximately 10 GHz. The high gain and low power consumption of NW photodetectors promise a new generation of phototransistors for applications such as sensing, imaging, and intrachip optical interconnects.
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              Recent advances in ZnO materials and devices

              D.C. Look (2001)
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                Author and article information

                Contributors
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                Journal
                Advanced Functional Materials
                Adv Funct Materials
                Wiley
                1616-301X
                1616-3028
                October 2018
                September 11 2018
                October 2018
                : 28
                : 43
                Affiliations
                [1 ] Univ. Grenoble Alpes CNRS Grenoble INP LMGP F‐38000 Grenoble France
                [2 ] CESAM/Q‐MAT SPIN Université de Liège B‐4000 Liège Belgium
                [3 ] Univ. Grenoble Alpes CNRS Grenoble INP SIMaP F‐38000 Saint‐Martin d'Hères France
                [4 ] Optoelectronics Group Cavendish Laboratory J. J. Thomson Avenue University of Cambridge Cambridge CB3 0HE UK
                [5 ] Institut des Nanotechnologies de Lyon INL—UMR5270 CNRS INSA Lyon Université de Lyon Villeurbanne F‐69621 France
                Article
                10.1002/adfm.201803142
                7efb0730-b533-4124-8c70-0ea50bbd8480
                © 2018

                http://onlinelibrary.wiley.com/termsAndConditions#vor

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