For Publishers
DiscoveryMetadataPeer reviewHostingPublishing
For Researchers
JoinPublishReviewCollect
Register
Blog
About
Search
Advanced search
My ScienceOpen
Search
For Publishers
For Researchers
Blog
About
6
views
37
references
 Top references
cited by
7
    
0 reviews
 Review
0
comments
 Comment
0
recommends
+1 Recommend
0 collections
    0
    shares
      195
      similar
       All similar
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      Multi-Level Cell Properties of a Bilayer Cu 2O/Al 2O 3 Resistive Switching Device

      research-article

      Read this article at

      ScienceOpenPublisherPMC
      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Abstract

          Multi-level resistive switching characteristics of a Cu 2O/Al 2O 3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism.

          Related collections

          Most cited references37

          • Record: found
          • Abstract: not found
          • Article: not found

          High dielectric constant oxides

          J. Robertson (2004)
          Article 0 comments Cited 239 times – based on 0 reviews     Review now
            Bookmark
            • Record: found
            • Abstract: found
            • Article: not found

            Electrochemical metallization memories--fundamentals, applications, prospects.

            Ilia Valov, Rainer Waser, John Jameson … (2011)
            This review focuses on electrochemical metallization memory cells (ECM), highlighting their advantages as the next generation memories. In a brief introduction, the basic switching mechanism of ECM cells is described and the historical development is sketched. In a second part, the full spectra of materials and material combinations used for memory device prototypes and for dedicated studies are presented. In a third part, the specific thermodynamics and kinetics of nanosized electrochemical cells are described. The overlapping of the space charge layers is found to be most relevant for the cell properties at rest. The major factors determining the functionality of the ECM cells are the electrode reaction and the transport kinetics. Depending on electrode and/or electrolyte material electron transfer, electro-crystallization or slow diffusion under strong electric fields can be rate determining. In the fourth part, the major device characteristics of ECM cells are explained. Emphasis is placed on switching speed, forming and SET/RESET voltage, R(ON) to R(OFF) ratio, endurance and retention, and scaling potentials. In the last part, circuit design aspects of ECM arrays are discussed, including the pros and cons of active and passive arrays. In the case of passive arrays, the fundamental sneak path problem is described and as well as a possible solution by two anti-serial (complementary) interconnected resistive switches per cell. Furthermore, the prospects of ECM with regard to further scalability and the ability for multi-bit data storage are addressed.
            Article 0 comments Cited 193 times – based on 0 reviews     Review now
              Bookmark
              • Record: found
              • Abstract: found
              • Article: not found

              Electrochemical dynamics of nanoscale metallic inclusions in dielectrics.

              Yuchao Yang, Peng Gao, Linze Li … (2014)
              Nanoscale metal inclusions in or on solid-state dielectrics are an integral part of modern electrocatalysis, optoelectronics, capacitors, metamaterials and memory devices. The properties of these composite systems strongly depend on the size, dispersion of the inclusions and their chemical stability, and are usually considered constant. Here we demonstrate that nanoscale inclusions (for example, clusters) in dielectrics dynamically change their shape, size and position upon applied electric field. Through systematic in situ transmission electron microscopy studies, we show that fundamental electrochemical processes can lead to universally observed nucleation and growth of metal clusters, even for inert metals like platinum. The clusters exhibit diverse dynamic behaviours governed by kinetic factors including ion mobility and redox rates, leading to different filament growth modes and structures in memristive devices. These findings reveal the microscopic origin behind resistive switching, and also provide general guidance for the design of novel devices involving electronics and ionics.
              Article 0 comments Cited 150 times – based on 0 reviews     Review now
                Bookmark
                All references

                Author and article information

                Journal
                Journal ID (nlm-ta): Nanomaterials (Basel)
                Journal ID (iso-abbrev): Nanomaterials (Basel)
                Journal ID (publisher-id): nanomaterials
                Title: Nanomaterials
                Publisher: MDPI
                ISSN (Electronic): 2079-4991
                Publication date (Electronic): 19 February 2019
                Publication date Collection: February 2019
                Volume: 9
                Issue: 2
                Electronic Location Identifier: 289
                Affiliations
                [1 ]i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal; j.deuermeier@ 123456campus.fct.unl.pt (J.D.); rfpm@ 123456fct.unl.pt (R.M.); emf@ 123456fct.unl.pt (E.F.)
                [2 ]Department of Materials and Earth Sciences, Technische Universität Darmstadt, Otto-Berndt-Straße 3, D-64287 Darmstadt, Germany; aklein@ 123456esm.tu-darmstadt.de
                Author notes
                [* ]Correspondence: a.kiazadeh@ 123456fct.unl.pt ; Tel.: +351212948562
                Author information
                https://orcid.org/0000-0002-2764-3124
                https://orcid.org/0000-0001-7463-1495
                Article
                Publisher ID: nanomaterials-09-00289
                DOI: 10.3390/nano9020289
                PMC ID: 6410279
                PubMed ID: 30791401
                SO-VID: 84e99ded-343c-4c9d-ab3a-c8ed0e4e2c71
                Copyright © © 2019 by the authors.
                License:

                Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

                History
                Date received : 31 December 2018
                Date accepted : 14 February 2019
                Categories
                Subject: Article

                Keywords: resistive switching memories,multi-level cell,copper oxide,grain boundaries,aluminum oxide
                Data availability:
                Keywords: resistive switching memories, multi-level cell, copper oxide, grain boundaries, aluminum oxide

                Comments

                Comment on this article

                scite_

                Similar content195

                See all similar

                Cited by7

                See all cited by

                Most referenced authors378

                See all reference authors