Plasmon-Enhanced Interface Charge Transfer Exciton of 2D In-Plane Lateral and van Der Waals MoS\(_2\)/WS\(_2\) Heterostructures

Abstract

The multi-scale computational method of combining first-principles calculation and finite element electromagnetic simulations is used to study plasmon-enhanced interlayer charge transfer (ICT) exciton of 2D lateral and van der Waals MoS2/WS2 heterostructure with 2H phase. The weak ICT excitons are observed in the 2H lateral and van der Waals MoS\(_2\)/WS\(_2\) heterostructures. Theoretical results reveal the physical principle of plexciton resulting from strong coupling between plasmonic and ICT exciton. The weak CT exciton can be strongly enhanced by metal plasmon, can provide a new way to observe the weak CT exciton. Our results can promote deeper understanding of the plexciton resulting from strong coupling interaction between plasmon and exciton of lateral and van der Waals heterostructures.