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      Filter-free image sensor pixels comprising silicon nanowires with selective color absorption.

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          Abstract

          The organic dye filters of conventional color image sensors achieve the red/green/blue response needed for color imaging, but have disadvantages related to durability, low absorption coefficient, and fabrication complexity. Here, we report a new paradigm for color imaging based on all-silicon nanowire devices and no filters. We fabricate pixels consisting of vertical silicon nanowires with integrated photodetectors, demonstrate that their spectral sensitivities are governed by nanowire radius, and perform color imaging. Our approach is conceptually different from filter-based methods, as absorbed light is converted to photocurrent, ultimately presenting the opportunity for very high photon efficiency.

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          Author and article information

          Journal
          Nano Lett.
          Nano letters
          1530-6992
          1530-6984
          2014
          : 14
          : 4
          Affiliations
          [1 ] School of Engineering and Applied Sciences, Harvard University , 33 Oxford Street, Cambridge, Massachusetts 02138, United States.
          Article
          10.1021/nl404379w
          24588103
          89f25f22-1d73-49c9-867c-654c2470113a
          History

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