21
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      Observation of topological states residing at step edges of WTe 2

      research-article

      Read this article at

      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Abstract

          Topological states emerge at the boundary of solids as a consequence of the nontrivial topology of the bulk. Recently, theory predicts a topological edge state on single layer transition metal dichalcogenides with 1 T’ structure. However, its existence still lacks experimental proof. Here, we report the direct observations of the topological states at the step edge of WTe 2 by spectroscopic-imaging scanning tunneling microscopy. A one-dimensional electronic state residing at the step edge of WTe 2 is observed, which exhibits remarkable robustness against edge imperfections. First principles calculations rigorously verify the edge state has a topological origin, and its topological nature is unaffected by the presence of the substrate. Our study supports the existence of topological edge states in 1 T’-WTe 2, which may envision in-depth study of its topological physics and device applications.

          Abstract

          Two-dimensional topological insulators support edge conduction electrons but its realization in real materials is rare. Here, Peng et al. report the direct observation of topological states at the step edge of WTe 2.

          Related collections

          Most cited references36

          • Record: found
          • Abstract: found
          • Article: found
          Is Open Access

          Topological Insulators

          , (2011)
          Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum Hall state. A 3D topological insulator supports novel spin polarized 2D Dirac fermions on its surface. In this Colloquium article we will review the theoretical foundation for these electronic states and describe recent experiments in which their signatures have been observed. We will describe transport experiments on HgCdTe quantum wells that demonstrate the existence of the edge states predicted for the quantum spin Hall insulator. We will then discuss experiments on Bi_{1-x}Sb_x, Bi_2 Se_3, Bi_2 Te_3 and Sb_2 Te_3 that establish these materials as 3D topological insulators and directly probe the topology of their surface states. We will then describe exotic states that can occur at the surface of a 3D topological insulator due to an induced energy gap. A magnetic gap leads to a novel quantum Hall state that gives rise to a topological magnetoelectric effect. A superconducting energy gap leads to a state that supports Majorana fermions, and may provide a new venue for realizing proposals for topological quantum computation. We will close by discussing prospects for observing these exotic states, a well as other potential device applications of topological insulators.
            Bookmark
            • Record: found
            • Abstract: not found
            • Article: not found

            Generalized Gradient Approximation Made Simple.

              Bookmark
              • Record: found
              • Abstract: found
              • Article: found
              Is Open Access

              Topological insulators and superconductors

              Topological insulators are new states of quantum matter which can not be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time-reversal symmetry. These topological materials have been theoretically predicted and experimentally observed in a variety of systems, including HgTe quantum wells, BiSb alloys, and Bi\(_2\)Te\(_3\) and Bi\(_2\)Se\(_3\) crystals. We review theoretical models, materials properties and experimental results on two-dimensional and three-dimensional topological insulators, and discuss both the topological band theory and the topological field theory. Topological superconductors have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions. We review the theory of topological superconductors in close analogy to the theory of topological insulators.
                Bookmark

                Author and article information

                Contributors
                ligang@shanghaitech.edu.cn
                yfu@hust.edu.cn
                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group UK (London )
                2041-1723
                22 September 2017
                22 September 2017
                2017
                : 8
                : 659
                Affiliations
                [1 ]ISNI 0000 0004 0368 7223, GRID grid.33199.31, School of Physics and Wuhan National High Magnetic Field Center, , Huazhong University of Science and Technology, ; Wuhan, 430074 China
                [2 ]GRID grid.440637.2, School of Physical Science and Technology, , ShanghaiTech University, ; Shanghai, 200031 China
                [3 ]ISNI 0000 0001 2348 4034, GRID grid.5329.d, Institute of Solid State Physics, , Vienna University of Technology, ; A-1040 Vienna, Austria
                [4 ]ISNI 0000000119573309, GRID grid.9227.e, Institute of Physics, , Chinese Academy of Sciences, ; Beijing, 100084 China
                Author information
                http://orcid.org/0000-0002-8289-0160
                Article
                745
                10.1038/s41467-017-00745-8
                5610310
                28939864
                91d3485b-4bdd-4e3c-9d0c-cb94c3774222
                © The Author(s) 2017

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 22 March 2017
                : 25 July 2017
                Categories
                Article
                Custom metadata
                © The Author(s) 2017

                Uncategorized
                Uncategorized

                Comments

                Comment on this article