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      Dense dislocations induced ductile SnTe thermoelectric semiconductor over a wide range of temperatures

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          Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set

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            Room-temperature ductile inorganic semiconductor

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              Lattice Strain Advances Thermoelectrics

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                Author and article information

                Contributors
                Journal
                Journal of Materials Science & Technology
                Journal of Materials Science & Technology
                Elsevier BV
                10050302
                May 2023
                May 2023
                : 144
                : 213-218
                Article
                10.1016/j.jmst.2022.11.003
                930d1bb1-8d25-4453-aa3c-fc9f1663c0dd
                © 2023

                https://www.elsevier.com/tdm/userlicense/1.0/

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