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Lanthanum-substituted bismuth titanate for use in non-volatile memories

Author(s): B. H. Park , B. S. Kang , S. D. Bu , T. W. Noh , J. Lee , W. Jo

Publication date Created: October 14 1999

Publication date (Print): October 14 1999

Journal: Nature

Publisher: Springer Nature

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Most cited references 17

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Ferroelectric memories.

J. Scott, C. Paz de Araujo (1989)

In the past year it has become possible to fabricate ferroelectric thin-film memories onto standard silicon integrated circuits that combine very high speed (30-nanosecond read/erase/rewrite operation), 5-volt standard silicon logic levels, very high density (2 by 2 micrometer cell size), complete nonvolatility (no standby power required), and extreme radiation hardness. These ferroelectric random-access memories are expected to replace magnetic core memory, magnetic bubble memory systems, and electrically erasable read-only memory for many applications. The switching kinetics of these films, 100 to 300 nanometers thick, are now well understood, with switching times that fit an activation field dependence that scales applied field and temperature. Earlier problems of fatigue and retention failure are also now understood and have been improved to acceptable levels.

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Fatigue-free ferroelectric capacitors with platinum electrodes

C. A-Paz de Araujo, J. D. Cuchiaro, L. McMillan … (1995)

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The Physics of Ferroelectric Memories

James Scott, Orlando Auciello, Ramamoorthy Ramesh (1998)

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Author and article information

Journal

Title: Nature

Abbreviated Title: Nature

Publisher: Springer Nature

ISSN (Print): 0028-0836

Publication date Created: October 14 1999

Publication date (Print): October 14 1999

Volume: 401

Issue: 6754

Pages: 682-684

Article

DOI: 10.1038/44352

SO-VID: ab6e68af-e6e6-4398-8821-ad07fa856fd4

Copyright © © 1999

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