Tellurium nanostructures for optoelectronic applications

We report the synthesis of centimeter-scale, uniform 1T'- and 2H-MoTe2 thin films via the tellurization of Mo thin films. 1T'-MoTe2 was initially grown and converted gradually to 2H-MoTe2 over a prolonged growth time under a Te atmosphere. Maintaining excessive Te was essential for obtaining the stable stoichiometric 2H-MoTe2 phase. Further annealing under a lower partial pressure of Te at the same temperature, followed by a rapid quenching, led to the reverse phase transition from 2H-MoTe2 to 1T'-MoTe2. The orientation of the 2H-MoTe2 film was determined by the tellurization rate. Slow tellurization was the key for obtaining a highly oriented 2H-MoTe2 film over the entire area, while fast tellurization led to a 2H-MoTe2 film with a randomly oriented c-axis.

Well-defined periodic mesostructures of hydrophilic ultrathin Te nanowires with aspect ratios of at least 10(4) can be produced by the Langmuir-Blodgett technique without any extra hydrophobic pretreatment or functionalization. Packing the arrayed nanowire monolayers will allow construction of nanomesh-like mesostructures or more complex multilayered structures composed of ultrathin nanowires on a planar substrate. The well-organized monolayer of Te nanowires with periodic mesostructures can be readily used as a stamp to transfer such mesostructured nanopatterns to other substrates or can be embedded within a polymer matrix. The mesostructures of ultrathin Te nanowire films show reversibly switched photoelectric properties between the lower- and higher-conductivity states when the light is off and on, and the photocurrent is influenced by the light intensity and the number of mesostructured nanowire monolayer films. This method can be extended for fabrication of other mesostructured assemblies of ultrathin nanowires or nanotubes.