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      Investigation of defect formation in porous ultra low k film (k=2.5) for 28nm technological node

      Author(s): , ,
      Publication date Created:
      Publication date (Print):
      Journal: Microelectronic Engineering
      Publisher: Elsevier BV

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          Journal
          Title: Microelectronic Engineering
          Abbreviated Title: Microelectronic Engineering
          Publisher: Elsevier BV
          ISSN (Print): 01679317
          Publication date Created: June 2015
          Publication date (Print): June 2015
          Volume: 140
          Pages: 6-10
          Article
          DOI: 10.1016/j.mee.2015.04.031
          SO-VID: af2b584b-f822-4f97-9581-434681516558
          Copyright © © 2015
          License:

          https://www.elsevier.com/tdm/userlicense/1.0/

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