Micro-Raman Spectroscopy of Mechanically Exfoliated Few-Quintuple Layers
  of Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3) Materials

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Abstract

Bismuth telluride - Bi(2)Te(3)- and related compounds have recently attracted strong interest owing to the discovery of the topological insulator properties in many members of this family of materials. The few-quintuple films of these materials are particularly interesting from the physics point of view. We report results of the micro-Raman spectroscopy study of the "graphene-like" exfoliated few-quintuple layers of Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3). It is found that crystal symmetry breaking in few-quintuple films results in appearance of A1u-symmetry Raman peaks, which are not active in the bulk crystals. The scattering spectra measured under the 633-nm wavelength excitation reveals a number of resonant features, which could be used for analysis of the electronic and phonon processes in these materials. In order to elucidate the influence of substrates on the few-quintuple-thick topological insulators we examined the Raman spectra of these films placed on mica, sapphire and hafnium-oxide substrates. The obtained results help to understand the physical mechanisms of Raman scattering in the few-quintuple-thick films and can be used for nanometrology of topological insulator films on various substrates.

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The Raman Fingerprint of Graphene

A. K. Geim, A. C. Ferrari, J C Meyer … (2006)

Graphene is the two-dimensional (2d) building block for carbon allotropes of every other dimensionality. It can be stacked into 3d graphite, rolled into 1d nanotubes, or wrapped into 0d fullerenes. Its recent discovery in free state has finally provided the possibility to study experimentally its electronic and phonon properties. Here we show that graphene's electronic structure is uniquely captured in its Raman spectrum that clearly evolves with increasing number of layers. Raman fingerprints for single-, bi- and few-layer graphene reflect changes in the electronic structure and electron-phonon interactions and allow unambiguous, high-throughput, non-destructive identification of graphene layers, which is critically lacking in this emerging research area.

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The birth of topological insulators.

Joel Moore (2010)

Certain insulators have exotic metallic states on their surfaces. These states are formed by topological effects that also render the electrons travelling on such surfaces insensitive to scattering by impurities. Such topological insulators may provide new routes to generating novel phases and particles, possibly finding uses in technological applications in spintronics and quantum computing.

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A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator

R. Cava, D Hsieh, M. Hasan … (2009)

When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect \cite{Klitzing,Tsui} dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted at the boundary. Recent theoretical models suggest that certain bulk insulators with large spin-orbit interactions may also naturally support conducting topological boundary states in the extreme quantum limit, which opens up the possibility for studying unusual quantum Hall-like phenomena in zero external magnetic field. Bulk Bi\(_{1-x}\)Sb\(_x\) single crystals are expected to be prime candidates for one such unusual Hall phase of matter known as the topological insulator. The hallmark of a topological insulator is the existence of metallic surface states that are higher dimensional analogues of the edge states that characterize a spin Hall insulator. In addition to its interesting boundary states, the bulk of Bi\(_{1-x}\)Sb\(_x\) is predicted to exhibit three-dimensional Dirac particles, another topic of heightened current interest. Here, using incident-photon-energy-modulated (IPEM-ARPES), we report the first direct observation of massive Dirac particles in the bulk of Bi\(_{0.9}\)Sb\(_{0.1}\), locate the Kramers' points at the sample's boundary and provide a comprehensive mapping of the topological Dirac insulator's gapless surface modes. These findings taken together suggest that the observed surface state on the boundary of the bulk insulator is a realization of the much sought exotic "topological metal". They also suggest that this material has potential application in developing next-generation quantum computing devices.