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      Correlation between nitrogen concentration and In content in InxGa1−xP liquid phase epitaxy layers

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      Journal of Applied Physics
      AIP Publishing

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          Efficient green electroluminescent junctions in GaP

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            Electroluminescence in GaAsxP1−x, InxGa1−xP, and AlxGa1−xP Junctions with x≲0.01

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              Luminescence and direct experimental observations of band‐structure effects in nitrogen‐doped GaxIn1−xP alloys

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                March 1982
                March 1982
                : 53
                : 3
                : 1818-1819
                Article
                10.1063/1.330595
                b7c61468-ee71-4333-8545-6d0de976b31d
                © 1982
                History

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