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      Oxidation-induced traps near SiO2/SiGe interface

      Author(s): , , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes

          Minoru Yoshida, Takuo Sugano, Kimiyoshi Yamasaki (1979)
          Article 0 comments Cited 69 times – based on 0 reviews     Review now
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            Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation

            B. S. Meyerson, R. Rosenberg, F. LeGoues (1989)
            Article 0 comments Cited 40 times – based on 0 reviews     Review now
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              Formation of epitaxial layers of Ge on Si substrates by Ge implantation and oxidation

              D. Fathy, O. Holland, C W White (1987)
              Article 0 comments Cited 34 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: August 1999
                Publication date (Print): August 1999
                Volume: 86
                Issue: 3
                Pages: 1542-1547
                Article
                DOI: 10.1063/1.370927
                SO-VID: bb0c710f-dc82-499c-9584-60a346badff5
                Copyright © © 1999
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