Review of displacement damage effects in silicon devices

Marshall, P.W.; Srour, J.R.; Marshall, C.J.

doi:10.1109/TNS.2003.813197

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Review of displacement damage effects in silicon devices

Author(s): J.R. Srour , C.J. Marshall , P.W. Marshall

Publication date Created: June 2003

Publication date (Print): June 2003

Journal: IEEE Transactions on Nuclear Science

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Most cited references 137

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The Displacement of Atoms in Solids by Radiation

G Kinchin, R S Pease (1955)

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Monte Carlo Calculations on Intranuclear Cascades. II. High-Energy Studies and Pion Processes

Anthony Turkevich, G Friedlander, J Miller … (1958)

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Recombination enhanced defect reactions

L.C. Kimerling (1978)

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Journal

Title: IEEE Transactions on Nuclear Science

Abbreviated Title: IEEE Trans. Nucl. Sci.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0018-9499

Publication date Created: June 2003

Publication date (Print): June 2003

Volume: 50

Issue: 3

Pages: 653-670

Article

DOI: 10.1109/TNS.2003.813197

SO-VID: bb8ec47b-efe5-4591-87de-442e222c3080

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Review of displacement damage effects in silicon devices

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Most cited references 137

The Displacement of Atoms in Solids by Radiation

Monte Carlo Calculations on Intranuclear Cascades. II. High-Energy Studies and Pion Processes

Recombination enhanced defect reactions

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