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      Centimeter‐Sized Single Crystal of Two‐Dimensional Halide Perovskites Incorporating Straight‐Chain Symmetric Diammonium Ion for X‐Ray Detection

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          Double-slit photoelectron interference in strong-field ionization of the neon dimer

          Wave-particle duality is an inherent peculiarity of the quantum world. The double-slit experiment has been frequently used for understanding different aspects of this fundamental concept. The occurrence of interference rests on the lack of which-way information and on the absence of decoherence mechanisms, which could scramble the wave fronts. Here, we report on the observation of two-center interference in the molecular-frame photoelectron momentum distribution upon ionization of the neon dimer by a strong laser field. Postselection of ions, which are measured in coincidence with electrons, allows choosing the symmetry of the residual ion, leading to observation of both, gerade and ungerade, types of interference.
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            Is Open Access

            High-quality bulk hybrid perovskite single crystals within minutes by inverse temperature crystallization

            Single crystals of methylammonium lead trihalide perovskites (MAPbX3; MA=CH3NH3 +, X=Br− or I−) have shown remarkably low trap density and charge transport properties; however, growth of such high-quality semiconductors is a time-consuming process. Here we present a rapid crystal growth process to obtain MAPbX3 single crystals, an order of magnitude faster than previous reports. The process is based on our observation of the substantial decrease of MAPbX3 solubility, in certain solvents, at elevated temperatures. The crystals can be both size- and shape-controlled by manipulating the different crystallization parameters. Despite the rapidity of the method, the grown crystals exhibit transport properties and trap densities comparable to the highest quality MAPbX3 reported to date. The phenomenon of inverse or retrograde solubility and its correlated inverse temperature crystallization strategy present a major step forward for advancing the field on perovskite crystallization.
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              Imperfections and their passivation in halide perovskite solar cells

              Perovskite solar cells to date are made of polycrystalline films which contain a high density of defects. Imperfection passivation to reduce non-radiative recombination and suppress ion migration could improve device efficiency and device stability. All highly-efficient organic–inorganic halide perovskite (OIHP) solar cells to date are made of polycrystalline perovskite films which contain a high density of defects, including point and extended imperfections. The imperfections in OIHP materials play an important role in the process of charge recombination and ion migration in perovskite solar cells (PSC), which heavily influences the resulting device energy conversion efficiency and stability. Here we review the recent advances in passivation of imperfections and suppressing ion migration to achieve improved efficiency and highly stable perovskite solar cells. Due to the ionic nature of OIHP materials, the defects in the photoactive films are inevitably electrically charged. The deep level traps induced by particular charged defects in OIHP films are major non-radiative recombination centers; passivation by coordinate bonding, ionic bonding, or chemical conversion have proven effective in mitigating the negative impacts of these deep traps. Shallow level charge traps themselves may contribute little to non-radiative recombination, but the migration of charged shallow level traps in OIHP films results in unfavorable band bending, interfacial reactions, and phase segregation, influencing the carrier extraction efficiency. Finally, the impact of defects and ion migration on the stability of perovskite solar cells is described.
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                Author and article information

                Contributors
                Journal
                Angewandte Chemie International Edition
                Angew. Chem. Int. Ed.
                Wiley
                1433-7851
                1521-3773
                August 24 2020
                June 17 2020
                August 24 2020
                : 59
                : 35
                : 14896-14902
                Affiliations
                [1 ]Key Laboratory of Applied Surface and Colloid Chemistry Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 China
                [2 ]Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM) Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (Nanjing Tech) 30 South Puzhu Road Nanjing 211816 P. R. China
                [3 ]MIIT Key Laboratory of Flexible Electronics (KLoFE) Key Laboratory of Flexible Electronics (KLoFE) Xi'an Key Laboratory of Flexible Electronics (KLoFE) Xi'an Key Laboratory of Biomedical Materials & Engineering Xi'an Institute of Flexible Electronics Northwestern Polytechnical University Xi'an 710072 Shaanxi China
                [4 ]Dalian National Laboratory for Clean Energy Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian 116023 Liaoning China
                [5 ]University of the Chinese Academy of Sciences Beijing 100039 China
                Article
                10.1002/anie.202004160
                32433812
                bc94c861-1bea-483b-8f4e-0aa2c55551a5
                © 2020

                http://onlinelibrary.wiley.com/termsAndConditions#vor

                http://doi.wiley.com/10.1002/tdm_license_1.1

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