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      Circular Dichroism in the Second Harmonic Field Evidenced by Asymmetric Au Coated GaAs Nanowires

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          Abstract

          Optical circular dichroism (CD) is an important phenomenon in nanophotonics, that addresses top level applications such as circular polarized photon generation in optics, enantiomeric recognition in biophotonics and so on. Chiral nanostructures can lead to high CD, but the fabrication process usually requires a large effort, and extrinsic chiral samples can be produced by simpler techniques. Glancing angle deposition of gold on GaAs nanowires can (NWs) induces a symmetry breaking that leads to an optical CD response that mimics chiral behavior. The GaAs NWs have been fabricated by a self-catalyzed, bottom-up approach, leading to large surfaces and high-quality samples at a relatively low cost. Here, we investigate the second harmonic generation circular dichroism (SHG-CD) signal on GaAs nanowires partially covered with Au. SHG is a nonlinear process of even order, and thus extremely sensitive to symmetry breaking. Therefore, the visibility of the signal is very high when the fabricated samples present resonances at first and second harmonic frequencies (i.e., 800 and 400 nm, in our case).

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          Most cited references26

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          Engineering light absorption in semiconductor nanowire devices.

          The use of quantum and photon confinement has enabled a true revolution in the development of high-performance semiconductor materials and devices. Harnessing these powerful physical effects relies on an ability to design and fashion structures at length scales comparable to the wavelength of electrons (approximately 1 nm) or photons (approximately 1 microm). Unfortunately, many practical optoelectronic devices exhibit intermediate sizes where resonant enhancement effects seem to be insignificant. Here, we show that leaky-mode resonances, which can gently confine light within subwavelength, high-refractive-index semiconductor nanostructures, are ideally suited to enhance and spectrally engineer light absorption in this important size regime. This is illustrated with a series of individual germanium nanowire photodetectors. This notion, together with the ever-increasing control over nanostructure synthesis opens up tremendous opportunities for the realization of a wide range of high-performance, nanowire-based optoelectronic devices, including solar cells, photodetectors, optical modulators and light sources.
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            Metamaterials: optical activity without chirality.

            We report that the classical phenomenon of optical activity, which is traditionally associated with chirality (helicity) of organic molecules, proteins, and inorganic structures, can be observed in artificial planar media which exhibit neither 3D nor 2D chirality. We observe the effect in the microwave and optical parts of the spectrum at oblique incidence to regular arrays of nonchiral subwavelength metamolecules in the form of strong circular dichroism and birefringence indistinguishable from those of chiral three-dimensional media.
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              Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature.

              Semiconductor nanowires are widely considered to be the next frontier in the drive towards ultra-small, highly efficient coherent light sources. While NW lasers in the visible and ultraviolet have been widely demonstrated, the major role of surface and Auger recombination has hindered their development in the near infrared. Here we report infrared lasing up to room temperature from individual core-shell GaAs-AlGaAs nanowires. When subject to pulsed optical excitation, NWs exhibit lasing, characterized by single-mode emission at 10 K with a linewidth <60 GHz. The major role of non-radiative surface recombination is obviated by the presence of an AlGaAs shell around the GaAs-active region. Remarkably low threshold pump power densities down to ~760 W cm(-2) are observed at 10 K, with a characteristic temperature of T(0)=109±12 K and lasing operation up to room temperature. Our results show that, by carefully designing the materials composition profile, high-performance infrared NW lasers can be realised using III/V semiconductors.
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                Author and article information

                Journal
                Micromachines (Basel)
                Micromachines (Basel)
                micromachines
                Micromachines
                MDPI
                2072-666X
                23 February 2020
                February 2020
                : 11
                : 2
                : 225
                Affiliations
                [1 ]SBAI Department, Sapienza University of Rome, 00161 Rome, Italy; grigore.leahu@ 123456uniroma1.it (G.L.); emilija.petronijevic@ 123456uniroma1.it (E.P.); concita.sibilia@ 123456uniroma1.it (C.S.)
                [2 ]Optoelectronics Research Centre, Tampere University, 33720 Tampere, Finland; teemu.hakkarainen@ 123456tuni.fi (T.H.); eero.koivusalo@ 123456tuni.fi (E.K.); marcelo.rizzopiton@ 123456tut.fi (M.R.P.); Soile.Talmila@ 123456tuni.fi (S.T.); mircea.guina@ 123456tuni.fi (M.G.)
                Author notes
                Author information
                https://orcid.org/0000-0003-1034-3843
                Article
                micromachines-11-00225
                10.3390/mi11020225
                7074832
                32102171
                c775150d-b294-43de-92b4-eb098b97e39c
                © 2020 by the authors.

                Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

                History
                : 22 January 2020
                : 20 February 2020
                Categories
                Article

                extrinsic chirality,second harmonic generation,gaas nanowires,plasmonic coating

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