Direct Measurement of Auger Electrons Emitted from a Semiconductor
  Light-Emitting Diode under Electrical Injection: Identification of the
  Dominant Mechanism for Efficiency Droop

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Abstract

We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated InGaN/GaN light emitting diode (LED) under electrical injection. Electron emission spectra were measured as a function of the current injected in the device. The appearance of high energy electron peaks simultaneously with an observed drop in electroluminescence efficiency shows that hot carriers are being generated in the active region (InGaN quantum wells) by an Auger process. A linear correlation was measured between the high energy emitted electron current and the "droop current" - the missing component of the injected current for light emission. We conclude that the droop phenomenon in GaN LED originates from the excitation of Auger processes.

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Defect solitons in parity-time periodic potentials

Hang Wang, Jiandong Wang (2011)

In this article, properties of solitons in a parity-time periodical lattices with a single-sited defect are investigated. Both of the negative and positive defects are considered. Linear stability analyses show that, when the defect is positive, in the semi-infinite gap, the solitons are always stable, while in the first gap, the solitons are unstable in most of their existence region except for those near the edge of the second band; when the defect is negative, in the semi-infinite gap, other than those near the edge of the first band, most solitons are stable, but in the first gap, all solitons are unstable. Such stability analyses are corroborated by numerical simulations.