Oxygen Defects Mediated Magnetism of Ni Doped ZnO

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Abstract

Ni doped ZnO nanoparticles were synthesized by a solution route and annealed in O ₂, air, and Ar, respectively. X-ray diffraction and X-ray photoelectron spectroscopy measurements show that the samples possess typical wurtzite structure and have no other impurity phases. Magnetization loops for ZnO samples were measured and clearly show typical ferromagnetic saturation behavior. With the defect analysis based on photoluminescence spectroscopy, the effect of defects on the nature and origin of ferromagnetism was investigated. The results suggest that oxygen vacancies, especially single ionized oxygen vacancies, play a crucial role in mediating ferromagnetism in the Ni doped ZnO.

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Interaction between thed-Shells in the Transition Metals. II. Ferromagnetic Compounds of Manganese with Perovskite Structure

Clarence Zener (1951)

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Zener model description of ferromagnetism in zinc-blende magnetic semiconductors

Dietl, Ohno, Matsukura … (2000)

Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.