7
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: not found
      • Article: not found

      Oxygen diffusion and precipitation in Czochralski silicon

      Journal of Physics: Condensed Matter
      IOP Publishing

      Read this article at

      ScienceOpenPublisher
      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Related collections

          Most cited references135

          • Record: found
          • Abstract: not found
          • Article: not found

          Point defects and dopant diffusion in silicon

            Bookmark
            • Record: found
            • Abstract: not found
            • Article: not found

            Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-\(A\)Center

              Bookmark
              • Record: found
              • Abstract: not found
              • Article: not found

              On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperatures

                Bookmark

                Author and article information

                Journal
                Journal of Physics: Condensed Matter
                J. Phys.: Condens. Matter
                IOP Publishing
                0953-8984
                1361-648X
                June 26 2000
                June 26 2000
                June 07 2000
                : 12
                : 25
                : R335-R365
                Article
                10.1088/0953-8984/12/25/201
                cdeb8b9c-34c7-4926-a5d0-04e86f7a9972
                © 2000
                History

                Comments

                Comment on this article