Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

Micovic, Miroslav; Nagele, Robert G.; Shinohara, Keisuke; Regan, Dean C.; TANG, YAN; Corrion, Andrea L.; Brown, David F. R.; Wong, Joel C.; Robinson, John F; Fung, Helen H.; Schmitz, Adele E.; Oh, Thomas C.; Kim, Samuel Jungjin; Chen, Peter S. Y.; Margomenos, Alexandros D.

doi:10.1109/TED.2013.2268160

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Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

Author(s): Keisuke Shinohara , Dean C. Regan , Yan Tang , Andrea L. Corrion , David F. Brown , Joel C. Wong , John F. Robinson , Helen H. Fung , Adele Schmitz , Thomas C. Oh , Samuel Jungjin Kim , Peter S. Chen , Robert G. Nagele , Alexandros D. Margomenos , Miroslav Micovic

Publication date (Print): October 2013

Journal: IEEE Transactions on Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. Shealy … (1999)

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Quantum capacitance devices

Serge Luryi (1988)

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AlGaN/GaN high electron mobility transistors with InGaN back-barriers

T. Palacios, U.K. Mishra, S.P. DenBaars … (2006)

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Title: IEEE Transactions on Electron Devices

Abbreviated Title: IEEE Trans. Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0018-9383

ISSN (Electronic): 1557-9646

Publication date Created: October 2013

Publication date (Print): October 2013

Volume: 60

Issue: 10

Pages: 2982-2996

Article

DOI: 10.1109/TED.2013.2268160

SO-VID: d3cbd288-c04d-400b-9175-b6b5129d1a75

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Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

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Most cited references 25

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Quantum capacitance devices

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

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