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      • Record: found
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      Reliability studies of AlGaN/GaN high electron mobility transistors

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          Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

          Augusto Tazzoli, Enrico Zanoni, Franco Zanon … (2008)
          Article 0 comments Cited 82 times – based on 0 reviews     Review now
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            Abinitiostudy of oxygen point defects in GaAs, GaN, and AlN

            R Nieminen, T. Mattila (1996)
            Article 0 comments Cited 64 times – based on 0 reviews     Review now
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              GaN HEMT reliability

              J. Joh, J.A. Del Alamo (2009)
              Article 0 comments Cited 61 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Semiconductor Science and Technology
                Abbreviated Title: Semicond. Sci. Technol.
                Publisher: IOP Publishing
                ISSN (Print): 0268-1242
                ISSN (Electronic): 1361-6641
                Publication date Created: July 01 2013
                Publication date (Print): July 01 2013
                Publication date (Electronic): June 21 2013
                Volume: 28
                Issue: 7
                Page: 074019
                Article
                DOI: 10.1088/0268-1242/28/7/074019
                SO-VID: da10f979-188d-4df7-85eb-17fa8f47632d
                Copyright © © 2013
                License:

                http://iopscience.iop.org/info/page/text-and-data-mining

                http://iopscience.iop.org/page/copyright

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