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      Meta-optics for spatial optical analog computing

      1 , 1 , 1
      Nanophotonics
      Walter de Gruyter GmbH

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          Abstract

          Rapidly growing demands for high-performance computing, powerful data processing, and big data necessitate the advent of novel optical devices to perform demanding computing processes effectively. Due to its unprecedented growth in the past two decades, the field of meta-optics offers a viable solution for spatially, spectrally, and/or even temporally sculpting amplitude, phase, polarization, and/or dispersion of optical wavefronts. In this review, we discuss state-of-the-art developments, as well as emerging trends, in computational metastructures as disruptive platforms for spatial optical analog computation. Two fundamental approaches based on general concepts of spatial Fourier transformation and Green’s function (GF) are discussed in detail. Moreover, numerical investigations and experimental demonstrations of computational optical surfaces and metastructures for solving a diverse set of mathematical problems (e.g., integrodifferentiation and convolution equations) necessary for on-demand information processing (e.g., edge detection) are reviewed. Finally, we explore the current challenges and the potential resolutions in computational meta-optics followed by our perspective on future research directions and possible developments in this promising area.

          Most cited references140

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          Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

          The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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            2D materials and van der Waals heterostructures

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              Light propagation with phase discontinuities: generalized laws of reflection and refraction.

              Conventional optical components rely on gradual phase shifts accumulated during light propagation to shape light beams. New degrees of freedom are attained by introducing abrupt phase changes over the scale of the wavelength. A two-dimensional array of optical resonators with spatially varying phase response and subwavelength separation can imprint such phase discontinuities on propagating light as it traverses the interface between two media. Anomalous reflection and refraction phenomena are observed in this regime in optically thin arrays of metallic antennas on silicon with a linear phase variation along the interface, which are in excellent agreement with generalized laws derived from Fermat's principle. Phase discontinuities provide great flexibility in the design of light beams, as illustrated by the generation of optical vortices through use of planar designer metallic interfaces.
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                Author and article information

                Journal
                Nanophotonics
                Walter de Gruyter GmbH
                2192-8614
                2192-8606
                September 07 2020
                September 07 2020
                : 9
                : 13
                : 4075-4095
                Affiliations
                [1 ]School of Electrical and Computer Engineering, Georgia Institute of Technology, 778 Atlantic Drive NW, Atlanta, GA 30332-0250, USA
                Article
                10.1515/nanoph-2020-0285
                e0414596-2cb8-4908-923d-12cfc629948e
                © 2020

                http://creativecommons.org/licenses/by/4.0

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