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      Coherent Growth and Characterization of van der Waals 1T-VSe\(_2\) Layers on GaAs(111)B Using Molecular Beam Epitaxy

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          Abstract

          We report epitaxial growth of vanadium diselenide (VSe\(_2\)) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe\(_2\) films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe\(_2\), a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices.

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          Author and article information

          Journal
          11 April 2020
          Article
          2004.05506

          http://arxiv.org/licenses/nonexclusive-distrib/1.0/

          Custom metadata
          14 pages, 4 figures
          cond-mat.mtrl-sci cond-mat.mes-hall

          Condensed matter, Nanophysics

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