Selective Probing of Hidden Spin-Polarized States in Inversion-Symmetric Bulk $ {\mathrm{MoS}}_{2}$

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Abstract

Spin- and angle-resolved photoemission spectroscopy is used to reveal that a large spin polarization is observable in the bulk centrosymmetric transition metal dichalcogenide MoS_{2}. It is found that the measured spin polarization can be reversed by changing the handedness of incident circularly polarized light. Calculations based on a three-step model of photoemission show that the valley and layer-locked spin-polarized electronic states can be selectively addressed by circularly polarized light, therefore providing a novel route to probe these hidden spin-polarized states in inversion-symmetric systems as predicted by Zhang et al. [Nat. Phys. 10, 387 (2014).NPAHAX1745-247310.1038/nphys2933].

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Influence of quantum confinement on the electronic structure of the transition metal sulfide$T$S${}_{2}$

A Kuć, N. Zibouche, T Heine (2011)

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Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

Yi Zhang, Tay-Rong Chang, Bo Zhou … (2014)

Quantum systems in confined geometries are host to novel physical phenomena. Examples include quantum Hall systems in semiconductors and Dirac electrons in graphene. Interest in such systems has also been intensified by the recent discovery of a large enhancement in photoluminescence quantum efficiency and a potential route to valleytronics in atomically thin layers of transition metal dichalcogenides, MX2 (M = Mo, W; X = S, Se, Te), which are closely related to the indirect-to-direct bandgap transition in monolayers. Here, we report the first direct observation of the transition from indirect to direct bandgap in monolayer samples by using angle-resolved photoemission spectroscopy on high-quality thin films of MoSe2 with variable thickness, grown by molecular beam epitaxy. The band structure measured experimentally indicates a stronger tendency of monolayer MoSe2 towards a direct bandgap, as well as a larger gap size, than theoretically predicted. Moreover, our finding of a significant spin-splitting of ∼ 180 meV at the valence band maximum of a monolayer MoSe2 film could expand its possible application to spintronic devices.