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Abstract
In semiconductor industry, strict critical dimension control by using a critical dimension
scanning electron microscope (CD-SEM) is an extremely urgent task in near-term years.
A Monte Carlo simulation model for study of CD-SEM image has been established, which
is based on using Mott's cross section for electron elastic scattering and the full
Penn dielectric function formalism for electron inelastic scattering and the associated
secondary electron (SE) production. In this work, a systematic calculation of CD-SEM
line-scan profiles and 2D images of trapezoidal Si lines has been performed by taking
into account different experimental factors including electron beam condition (primary
energy, probe size), line geometry (width, height, foot/corner rounding, sidewall
angle, and roughness), material properties, and SE signal detection. The influences
of these factors to the critical dimension metrology are investigated, leading to
build a future comprehensive model-based library.
[1
]Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics;
University of Science and Technology of China; Hefei; Anhui; China