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      Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor

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          Abstract

          A reconfigurable neural network vision sensor is proposed by using gate-tunable photoresponse of van der Waals heterostructures.

          Abstract

          Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities of the retina provides a promising pathway to achieving vision sensor with highly efficient image processing. Here, we demonstrate a prototype vision sensor that operates via the gate-tunable positive and negative photoresponses of the van der Waals (vdW) vertical heterostructures. The sensor emulates not only the neurobiological functionalities of bipolar cells and photoreceptors but also the unique connectivity between bipolar cells and photoreceptors. By tuning gate voltage for each pixel, we achieve reconfigurable vision sensor for simultaneous image sensing and processing. Furthermore, our prototype vision sensor itself can be trained to classify the input images by updating the gate voltages applied individually to each pixel in the sensor. Our work indicates that vdW vertical heterostructures offer a promising platform for the development of neural network vision sensor.

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          Most cited references37

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          Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal.

          The demand for compact ultraviolet laser devices is increasing, as they are essential in applications such as optical storage, photocatalysis, sterilization, ophthalmic surgery and nanosurgery. Many researchers are devoting considerable effort to finding materials with larger bandgaps than that of GaN. Here we show that hexagonal boron nitride (hBN) is a promising material for such laser devices because it has a direct bandgap in the ultraviolet region. We obtained a pure hBN single crystal under high-pressure and high-temperature conditions, which shows a dominant luminescence peak and a series of s-like exciton absorption bands around 215 nm, proving it to be a direct-bandgap material. Evidence for room-temperature ultraviolet lasing at 215 nm by accelerated electron excitation is provided by the enhancement and narrowing of the longitudinal mode, threshold behaviour of the excitation current dependence of the emission intensity, and a far-field pattern of the transverse mode.
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            Optoelectronic resistive random access memory for neuromorphic vision sensors

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              Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

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                Author and article information

                Journal
                Sci Adv
                Sci Adv
                SciAdv
                advances
                Science Advances
                American Association for the Advancement of Science
                2375-2548
                June 2020
                24 June 2020
                : 6
                : 26
                : eaba6173
                Affiliations
                [1 ]National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
                [2 ]Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA.
                [3 ]School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
                [4 ]National Institute for Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan.
                Author notes
                [*]

                These authors contributed equally to this work.

                []Corresponding author: Email: jjyang@ 123456umass.edu (J.J.Y.); miao@ 123456nju.edu.cn (F.M.)
                Author information
                http://orcid.org/0000-0002-3675-3616
                http://orcid.org/0000-0002-3984-1777
                http://orcid.org/0000-0002-8827-0309
                http://orcid.org/0000-0003-2264-0677
                http://orcid.org/0000-0003-4113-717X
                http://orcid.org/0000-0001-9861-9298
                http://orcid.org/0000-0002-2932-4370
                http://orcid.org/0000-0001-8975-5626
                http://orcid.org/0000-0003-0691-0868
                http://orcid.org/0000-0003-3701-8119
                http://orcid.org/0000-0001-8242-7531
                http://orcid.org/0000-0002-0962-5424
                Article
                aba6173
                10.1126/sciadv.aba6173
                7314516
                32637614
                e96e132f-0e72-4d01-8401-f6c1837cadb3
                Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

                This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.

                History
                : 18 December 2019
                : 06 April 2020
                Funding
                Funded by: doi http://dx.doi.org/10.13039/501100001809, National Natural Science Foundation of China;
                Award ID: 61625402, 61921005, 61974176
                Funded by: doi http://dx.doi.org/10.13039/501100004608, National Natural Science Foundation of Jiangsu Province;
                Award ID: BK20180330
                Funded by: doi http://dx.doi.org/10.13039/501100012226, Fundamental Research Funds for the Central Universities;
                Award ID: 020414380122, 020414380084
                Categories
                Research Article
                Research Articles
                SciAdv r-articles
                Applied Physics
                Materials Science
                Applied Physics
                Custom metadata
                Sef Rio

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