Photo-Induced Room-Temperature Gas Sensing with a-IGZO Based Thin-Film Transistors Fabricated on Flexible Plastic Foil

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Abstract

We present a gas sensitive thin-film transistor (TFT) based on an amorphous Indium–Gallium–Zinc–Oxide (a-IGZO) semiconductor as the sensing layer, which is fabricated on a free-standing flexible polyimide foil. The photo-induced sensor response to NO ₂ gas at room temperature and the cross-sensitivity to humidity are investigated. We combine the advantages of a transistor based sensor with flexible electronics technology to demonstrate the first flexible a-IGZO based gas sensitive TFT. Since flexible plastic substrates prohibit the use of high operating temperatures, the charge generation is promoted with the help of UV-light absorption, which ultimately triggers the reversible chemical reaction with the trace gas. Furthermore, the device fabrication process flow can be directly implemented in standard TFT technology, allowing for the parallel integration of the sensor and analog or logical circuits.

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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.

Kenji Nomura, Hiromichi Ohta, Akihiro Takagi … (2004)

Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H) and organic semiconductors have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material--namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)--for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V(-1) s(-1), which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6-9 cm2 V(-1) s(-1), and device characteristics are stable during repetitive bending of the TTFT sheet.

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A Survey on Gas Sensing Technology

Xiao Liu, Sitian Cheng, Hong-Hong Liu … (2012)

Sensing technology has been widely investigated and utilized for gas detection. Due to the different applicability and inherent limitations of different gas sensing technologies, researchers have been working on different scenarios with enhanced gas sensor calibration. This paper reviews the descriptions, evaluation, comparison and recent developments in existing gas sensing technologies. A classification of sensing technologies is given, based on the variation of electrical and other properties. Detailed introduction to sensing methods based on electrical variation is discussed through further classification according to sensing materials, including metal oxide semiconductors, polymers, carbon nanotubes, and moisture absorbing materials. Methods based on other kinds of variations such as optical, calorimetric, acoustic and gas-chromatographic, are presented in a general way. Several suggestions related to future development are also discussed. Furthermore, this paper focuses on sensitivity and selectivity for performance indicators to compare different sensing technologies, analyzes the factors that influence these two indicators, and lists several corresponding improved approaches.

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Semiconducting metal oxides as sensors for environmentally hazardous gases

K. Wetchakun, T. Samerjai, N. Tamaekong … (2011)

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Journal

Journal ID (nlm-ta): Sensors (Basel)

Journal ID (iso-abbrev): Sensors (Basel)

Journal ID (publisher-id): sensors

Title: Sensors (Basel, Switzerland)

Publisher: MDPI

ISSN (Electronic): 1424-8220

Publication date (Electronic): 26 January 2018

Publication date Collection: February 2018

Volume: 18

Issue: 2

Electronic Location Identifier: 358

Affiliations

[1 ]Electronics Laboratory, Swiss Federal Institute of Technology (ETH) Zürich, Gloriastrasse 35, 8092 Zürich, Switzerland; dausa@ 123456ife.ee.ethz.ch (A.D.); talain@ 123456student.ethz.ch (A.T.); giovanni.salvatore@ 123456ife.ee.ethz.ch (G.A.S.); giuseppe.cantarella@ 123456ife.ee.ethz.ch (G.C.); troester@ 123456ife.ee.ethz.ch (G.T.)

[2 ]Laboratory for Gas Sensors, Department of Microsystems Engineering (IMTEK), University of Freiburg, Freiburg, Germany; benedikt.bierer@ 123456imtek.uni-freiburg.de (B.B.); alvaro.ortiz.perez@ 123456imtek.de (A.O.P.); juergen.woellenstein@ 123456imtek.uni-freiburg.de (J.W.)

[3 ]Fraunhofer Institute for Physical Measurement Techniques, Freiburg, Germany

[4 ]Department of Computer Science, Universidad Autónoma de Madrid, Francisco Tomás y Valiente 11, 28049 Madrid, Spain; stefan.palzer@ 123456uam.es

Author notes

[* ]Correspondence: stefan.knobelspies@ 123456ife.ee.ethz.ch ; Tel.: +41-44-632-2744

Author information

Stefan Knobelspies https://orcid.org/0000-0003-2946-3992

Alwin Daus https://orcid.org/0000-0001-7461-3756

Giovanni Antonio Salvatore https://orcid.org/0000-0002-8983-3257

Giuseppe Cantarella https://orcid.org/0000-0002-6398-601X

Stefan Palzer https://orcid.org/0000-0003-2109-1936

Gerhard Tröster https://orcid.org/0000-0002-9278-1638

Article

Publisher ID: sensors-18-00358

DOI: 10.3390/s18020358

PMC ID: 5855925

PubMed ID: 29373524

SO-VID: eab991f4-ce99-4557-bd81-e3db5c1283fe

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Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

Photo-Induced Room-Temperature Gas Sensing with a-IGZO Based Thin-Film Transistors Fabricated on Flexible Plastic Foil

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Journal of Disability Research

Most cited references 38

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.

A Survey on Gas Sensing Technology

Semiconducting metal oxides as sensors for environmentally hazardous gases

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