2
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: not found
      • Article: not found

      Analysis of the Voltage–Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching

      Read this article at

      ScienceOpenPublisher
      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Related collections

          Most cited references21

          • Record: found
          • Abstract: found
          • Article: not found

          A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.

          Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaO(x)-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 10(12). Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
            Bookmark
            • Record: found
            • Abstract: not found
            • Article: not found

            Phase Change Memory

              Bookmark
              • Record: found
              • Abstract: not found
              • Article: not found

              Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

                Bookmark

                Author and article information

                Journal
                IEEE Transactions on Nanotechnology
                IEEE Trans. Nanotechnology
                Institute of Electrical and Electronics Engineers (IEEE)
                1536-125X
                1941-0085
                November 2014
                November 2014
                : 13
                : 6
                : 1127-1132
                Article
                10.1109/TNANO.2014.2340571
                eb2cf355-524a-4174-984f-8b651c014787
                © 2014
                History

                Comments

                Comment on this article