Observation of giant non-reciprocal charge transport from quantum Hall states in a topological insulator.

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Abstract

Symmetry breaking in quantum materials is of great importance and can lead to non-reciprocal charge transport. Topological insulators provide a unique platform to study non-reciprocal charge transport due to their surface states, especially quantum Hall states under an external magnetic field. Here we report the observation of non-reciprocal charge transport mediated by quantum Hall states in devices composed of the intrinsic topological insulator Sn-Bi1.1Sb0.9Te2S, which is attributed to asymmetric scattering between quantum Hall states and Dirac surface states. A giant non-reciprocal coefficient of up to 2.26 × 105 A-1 is found. Our work not only reveals the properties of non-reciprocal charge transport of quantum Hall states in topological insulators but also paves the way for future electronic devices.

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Journal

Journal ID (iso-abbrev): Nat Mater

Title: Nature materials

Publisher: Springer Science and Business Media LLC

ISSN (Electronic): 1476-4660

ISSN (Print): 1476-1122

Publication date (Electronic): Apr 19 2024

Affiliations

[1 ] National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China.

[2 ] Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.

[3 ] Hefei National Laboratory, Hefei, China.

[4 ] National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China. szhang@nju.edu.cn.

[5 ] Department of Physics, Xiamen University, Xiamen, China.

[6 ] Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. xfwang@nju.edu.cn.

[7 ] National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China. songfengqi@nju.edu.cn.

[8 ] Institute of Atom Manufacturing, Nanjing University, Suzhou, China. songfengqi@nju.edu.cn.

Article

Publisher Item ID: 10.1038/s41563-024-01874-4

DOI: 10.1038/s41563-024-01874-4

PubMed ID: 38641696

SO-VID: ec31a4be-e7c2-4c49-9d3f-1f6eed93d05f

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