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      NoN analyticity of Hanle effect at zero magnetic field in a quantum dot

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          Abstract

          Non analytic behaviour of Hanle effect in InGaAs quantum dots is described in terms of a simple 4-level model. Despite simplicity the model makes it possible to explain the observed fracture of Hanle curve at zero magnetic field and obtain quantitative agreement with the experiment.

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          Negative circular polarization of InP QD luminescence: Mechanism of formation and main regularities

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            Time-resolved Hanle effect in (In Ga)As/GaAs quantum dots

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              Author and article information

              Journal
              20 February 2013
              Article
              1302.4918
              ec465b2c-a0aa-47ee-948a-8a856330169d

              http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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              Custom metadata
              cond-mat.mes-hall

              Nanophysics
              Nanophysics

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