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      Controllable Synthesis of Atomically Thin 1T‐SnSe 2 Flakes and Its Linear Second Harmonic Generation with Layer Thickness

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          Atomically Thin\({\mathrm{MoS}}_{2}\): A New Direct-Gap Semiconductor

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            Two-dimensional gas of massless Dirac fermions in graphene.

            Quantum electrodynamics (resulting from the merger of quantum mechanics and relativity theory) has provided a clear understanding of phenomena ranging from particle physics to cosmology and from astrophysics to quantum chemistry. The ideas underlying quantum electrodynamics also influence the theory of condensed matter, but quantum relativistic effects are usually minute in the known experimental systems that can be described accurately by the non-relativistic Schrödinger equation. Here we report an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation. The charge carriers in graphene mimic relativistic particles with zero rest mass and have an effective 'speed of light' c* approximately 10(6) m s(-1). Our study reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions. In particular we have observed the following: first, graphene's conductivity never falls below a minimum value corresponding to the quantum unit of conductance, even when concentrations of charge carriers tend to zero; second, the integer quantum Hall effect in graphene is anomalous in that it occurs at half-integer filling factors; and third, the cyclotron mass m(c) of massless carriers in graphene is described by E = m(c)c*2. This two-dimensional system is not only interesting in itself but also allows access to the subtle and rich physics of quantum electrodynamics in a bench-top experiment.
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              Anomalous lattice vibrations of single- and few-layer MoS2.

              Molybdenum disulfide (MoS(2)) of single- and few-layer thickness was exfoliated on SiO(2)/Si substrate and characterized by Raman spectroscopy. The number of S-Mo-S layers of the samples was independently determined by contact-mode atomic force microscopy. Two Raman modes, E(1)(2g) and A(1g), exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasing with thickness. The results provide a convenient and reliable means for determining layer thickness with atomic-level precision. The opposite direction of the frequency shifts, which cannot be explained solely by van der Waals interlayer coupling, is attributed to Coulombic interactions and possible stacking-induced changes of the intralayer bonding. This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime.
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                Author and article information

                Contributors
                (View ORCID Profile)
                Journal
                Advanced Materials Interfaces
                Adv Materials Inter
                Wiley
                2196-7350
                2196-7350
                April 2022
                February 26 2022
                April 2022
                : 9
                : 11
                : 2102376
                Affiliations
                [1 ]School of Materials Science and Engineering Peking University Beijing 100871 P. R. China
                [2 ]Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface Science School of Mathematics and Physics University of Science and Technology Beijing 100083 P. R. China
                [3 ]Institute of Physics & University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 P. R. China
                [4 ]Songshan Lake Materials Laboratory Dongguan Guangdong 523808 P. R. China
                Article
                10.1002/admi.202102376
                f3b77a03-8f19-49de-bda2-f1b389d53d4d
                © 2022

                http://onlinelibrary.wiley.com/termsAndConditions#vor

                http://doi.wiley.com/10.1002/tdm_license_1.1

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