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      Optical anisotropy and spontaneous ordering in\({\mathrm{Ga}}_{0.5}\)\({\mathrm{In}}_{0.5}\)P: An investigation using reflectance-difference spectroscopy

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          \(\overrightarrow{\mathrm{k}}·\overrightarrow{\mathrm{p}}\)perturbation theory in III-V compounds and alloys: a reexamination

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            Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy

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              Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                0163-1829
                1095-3795
                March 1995
                March 15 1995
                : 51
                : 12
                : 7603-7612
                Article
                10.1103/PhysRevB.51.7603
                f6c622dd-d4b8-4aa0-a547-d303b0857169
                © 1995

                http://link.aps.org/licenses/aps-default-license

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