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      Controlling Catalyst Bulk Reservoir Effects for Monolayer Hexagonal Boron Nitride CVD

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          Abstract

          Highly controlled Fe-catalyzed growth of monolayer hexagonal boron nitride (h-BN) films is demonstrated by the dissolution of nitrogen into the catalyst bulk via NH 3 exposure prior to the actual growth step. This “pre-filling” of the catalyst bulk reservoir allows us to control and limit the uptake of B and N species during borazine exposure and thereby to control the incubation time and h-BN growth kinetics while also limiting the contribution of uncontrolled precipitation-driven h-BN growth during cooling. Using in situ X-ray diffraction and in situ X-ray photoelectron spectroscopy combined with systematic growth calibrations, we develop an understanding and framework for engineering the catalyst bulk reservoir to optimize the growth process, which is also relevant to other 2D materials and their heterostructures.

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          Progress, challenges, and opportunities in two-dimensional materials beyond graphene.

          Graphene's success has shown that it is possible to create stable, single and few-atom-thick layers of van der Waals materials, and also that these materials can exhibit fascinating and technologically useful properties. Here we review the state-of-the-art of 2D materials beyond graphene. Initially, we will outline the different chemical classes of 2D materials and discuss the various strategies to prepare single-layer, few-layer, and multilayer assembly materials in solution, on substrates, and on the wafer scale. Additionally, we present an experimental guide for identifying and characterizing single-layer-thick materials, as well as outlining emerging techniques that yield both local and global information. We describe the differences that occur in the electronic structure between the bulk and the single layer and discuss various methods of tuning their electronic properties by manipulating the surface. Finally, we highlight the properties and advantages of single-, few-, and many-layer 2D materials in field-effect transistors, spin- and valley-tronics, thermoelectrics, and topological insulators, among many other applications.
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            Electronics based on two-dimensional materials.

            The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.
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              Large scale growth and characterization of atomic hexagonal boron nitride layers.

              Hexagonal boron nitride (h-BN), a layered material similar to graphite, is a promising dielectric. Monolayer h-BN, so-called "white graphene", has been isolated from bulk BN and could be useful as a complementary two-dimensional dielectric substrate for graphene electronics. Here we report the large area synthesis of h-BN films consisting of two to five atomic layers, using chemical vapor deposition. These atomic films show a large optical energy band gap of 5.5 eV and are highly transparent over a broad wavelength range. The mechanical properties of the h-BN films, measured by nanoindentation, show 2D elastic modulus in the range of 200-500 N/m, which is corroborated by corresponding theoretical calculations.
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                Author and article information

                Journal
                Nano Lett
                Nano Lett
                nl
                nalefd
                Nano Letters
                American Chemical Society
                1530-6984
                1530-6992
                12 January 2016
                10 February 2016
                : 16
                : 2
                : 1250-1261
                Affiliations
                []Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA Cambridge, United Kingdom
                []Materials Sciences Division, Lawrence Berkeley National Laboratory , 1 Cyclotron Road, Berkeley, California 94720, United States
                [§ ]Faculty of Physics, University of Vienna , Boltzmanngasse 5, A-1090 Vienna, Austria
                []Helmholtz-Zentrum Berlin für Materialen und Energie , D-12489 Berlin, Germany
                []Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf , 01314 Dresden, Germany
                []Fritz Haber Institute , D-14195 Berlin-Dahlem, Germany
                Author notes
                Article
                10.1021/acs.nanolett.5b04586
                4751513
                26756610
                f8bb7145-2157-473b-9e52-93cdd747d046
                Copyright © 2016 American Chemical Society

                This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.

                History
                : 10 November 2015
                : 08 January 2016
                Categories
                Letter
                Custom metadata
                nl5b04586
                nl-2015-045869

                Nanotechnology
                hexagonal boron nitride (h-bn),chemical vapor deposition (cvd),borazine (hbnh)3,ammonia (nh3),iron (fe)

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